Indentation Fatigue of Silicon Carbide and Silicon Nitride

Silicon Nitride and Silicon Carbide

Corrosion Characteristics of Silicon Carbide and Silicon Nitride

The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixt...

Vitreous bond silicon carbide wheel for grinding of silicon nitride

This study investigates the grinding of sintered silicon nitride using a SiC wheel with a fine abrasive grit size and dense vitreous bond. The difference of hardness between the green SiC abrasive and sintered Si3N4 workpiece (25.5 vs. 13.7 GPa) is small. Large grinding forces, particularly the specific tangential grinding forces, are observed in SiC grinding of Si3N4. The measured specific gri...

Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain b-SiC nanowires involves heating silica gel with activated carbon at 1360 uC in H2 or NH3. The same reaction, if carried out in the p...

Pattern Photoresist Silicon Silicon Nitride Silicon Photoresist Silicon Nitride Silicon Etch Nitride Remove Photoresist

In this proposal we seek to establish a porous silicon based etching process in the WTC microfabrication laboratory. The new process will allow us to etch high aspect ratio holes through a wafer. Holes like these are important for decreasing the dead volume of connections between micro and macro systems and for increasing the complexity of micro-fluidic systems. At the present time, the minimum...